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Preliminary Technical Information
Linear Power MOSFET IXTN46N50L
V DSS
= 500
V
With Extended FBSOA
N-Channel Enhancement Mode
D
I D25
R DS(on)
= 46
≤ 0.16
A
Ω
G
S
S
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXTN)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
Transient
500
500
± 30
± 40
V
V
V
V
E153432
G
S
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
46
100
46
A
A
A
D
S
E AR
E AS
T C = 25 ° C
T C = 25 ° C
60
1.5
mJ
J
G = Gate
S = Source
D = Drain
P D
T J
T JM
T stg
T C = 25 ° C
700
-55 to +150
150
-55 to +150
W
° C
° C
° C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
V ISOL
M d
Weight
50/60 Hz, RMS,
I ISOL ≤ 1 mA,
Mounting torque for Base Plate
Terminal connection torque
T = 1 min
T=1s
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
? Designed for linear operation
? International standard package
? Molding epoxy meets UL94 V-0
flammability classification
? miniBLOC with Aluminium nitride
isolation
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
? Programmable loads
? Current regulators
? DC-DC converters
? Battery chargers
? DC choppers
? Temperature and lighting controls
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 250 μ A
V GS = ± 30 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
V GS = 20 V, I D = 0.5 I D25
500
3
T J = 25 ° C
T J = 125 ° C
6
± 200
50
1
0.16
V
V
nA
μ A
mA
Ω
Advantages
? Easy to mount
? Space savings
? High power density
Note 1
? 2007 IXYS CORPORATION, All rights reserved
DS99399A(03/07)
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